isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 46A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

30V N-Channel AlphaMOS

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MOSFET N-CH 30V 18A TO252

MOSFET N-CH TO252

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

Overdrive-Protected Wideband Op Amp

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Overdrive-Protected Wideband Op Amp

文件：362.98 Kbytes Page：6 Pages

Overdrive-Protected Wideband Op Amp

文件：362.98 Kbytes Page：6 Pages

Overdrive-Protected Wideband Op Amp

文件：362.98 Kbytes Page：6 Pages