N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB432 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOB432 is Pb-free (meets ROHS & Sony 259 specifications). AOB4

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 34mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB432 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOB432 is Pb-free (meets ROHS & Sony 259 specifications). AOB4

1.24V ADJUSTABLE SHUNT VOLTAGE REFERENCE

DESCRIPTION The TS432 is an adjustable low power shunt voltage reference providing an output voltage from 1.24V to 10V over the industrial temperature range (-40 to +85°C). Available in SOT23-3 surface mount package, it can be designed in applications where space saving is a critical issue. ■ 1.

Dual Wideband Monolithic Op Amp with Disable

文件：863.15 Kbytes Page：8 Pages

ADJUSTABLE PRECISION SHUNT REGULATORS

文件：795.46 Kbytes Page：41 Pages

ADJUSTABLE PRECISION SHUNT REGULATORS

文件：795.46 Kbytes Page：41 Pages

ADJUSTABLE PRECISION SHUNT REGULATORS

文件：795.46 Kbytes Page：41 Pages