N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB428 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard Product AOB428 is Pb-free (meets ROHS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 105V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB428 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard Product AOB428 is Pb-free (meets ROHS

1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS

GENERAL DESCRIPTION The TC426/TC427/TC428 are dual CMOS high-speed drivers. A TTL/CMOS input voltage level is translated into a rail-to-rail output voltage level swing. The CMOS output is within 25 mV of ground or positive supply. FEATURES ■ High-Speed Switching (CL = 1000pF) 30nsec

Damper diode

文件：52 Kbytes Page：7 Pages

Dual Wideband, Low-Noise, Voltage Feedback Op Amp

文件：898.2 Kbytes Page：8 Pages

Dual Wideband, Low-Noise, Voltage Feedback Op Amp

文件：898.2 Kbytes Page：8 Pages

Dual Wideband, Low-Noise, Voltage Feedback Op Amp

文件：898.2 Kbytes Page：8 Pages