N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB420 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. AOB420L (Green Product) is offered in a Lead Free package. Features

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 110A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AOB420 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. AOB420L (Green Product) is offered in a Lead Free package. • VDS (V) = 30V\n• ID = 110A\n• RDS(ON);

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB420 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. AOB420L (Green Product) is offered in a Lead Free package. Features

High Voltage Transistors(NPN)

High Voltage Transistors NPN Silicon

High-Speed, Voltage Feedback Op Amp

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High-Speed, Voltage Feedback Op Amp

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ULTRAFAST RECTIFIERS 4.0 AMPERES 200-600 VOLTS

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