N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB416 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOB416 is Pb-free (meets ROHS & Sony 25

isc N-Channel MOSFET Transistor

• DESCRITION • Be suitable for synchronous rectification for server and general purpose applications • FEATURES • Drain Current –ID= 45A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) = 36mΩ (Max) • 100 avalanche tested • Minimum

100V N-Channel MOSFET

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N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB416 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOB416 is Pb-free (meets ROHS & Sony 25

100V N-Channel MOSFET

文件：273.97 Kbytes Page：7 Pages

1W, Ultra-High Isolation SIP, Single & Dual Output DC/DC Converters

1W, Ultra-High Isolation SIP, Single & Dual Output DC/DC Converters MPS Industries ADC400 1W DC/DCs are specially designed to provide ultra-high levels of isolation 6000VDC in a miniature SIP package. The series consists of 12 models with input voltages of 5V and 12VDC which offers standard

Economy Trimmers

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Single & Dual Output, 4W Ultra-Wide Input Range DC/DC Converters

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ALUMINUM CHASSIS

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Tape and Reel Packaging

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