Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8830 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load swit

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

文件：200.93 Kbytes Page：5 Pages

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

文件：200.93 Kbytes Page：5 Pages

1.5GHz 첨 10 Prescaler

Description The SP8830 is one of a range of very high speed low power prescalers for professional and military applications. The device features a complementary output stage with on chip current sources for the emitter follower outputs. Features ● High Speed Operation 1·5GHz ● Silicon Tec

DUAL DIFFERENTIAL LINE DRIVERS

文件：153.35 Kbytes Page：17 Pages

Dual Differential Line Driver

文件：181.98 Kbytes Page：7 Pages

Dual Differential Line Driver

文件：181.98 Kbytes Page：7 Pages

DUAL DIFFERENTIAL LINE DRIVERS

文件：153.35 Kbytes Page：17 Pages