Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8818 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switc

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

文件：1.64838 Mbytes Page：4 Pages

MOSFET：Dual-Channel

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8818 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switc

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

文件：1.64838 Mbytes Page：4 Pages

KK® 396 Reflow Process Compatible (RPC) Compatible (RPC)

Features and Benefits High-temperature nylon housing Withstands lead-free hightemperature solder processing up to +260°C. Does not require the drying needs of normal nylon Optional MarKK terminal with four points of contact Supports up to 13.0A per circuit. Ideal for higher power and highv

KK짰 Crimp Terminal 8818, 18-22 AWG, Reel, Brass Tin (Sn)

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KK짰 Crimp Terminal 8818, 18-22 AWG, Reel, Phosphor Bronze Selective Gold (Au)

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KK짰 Crimp Terminal 8818, 18-22 AWG, Reel, Phosphor Bronze Selective Gold (Au)

文件：144.39 Kbytes Page：2 Pages

KK짰 Crimp Terminal 8818, 18-22 AWG, Bag, Phosphor Bronze Selective Gold (Au)

文件：144.07 Kbytes Page：2 Pages