P-Channel Enhancement Mode Field Effect Transistor

General Description The AO7407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -20V ID = -1.2 A RDS(ON)

20V P-Channel MOSFET

General Description The AO7407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS -20V ID (at V

P-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • DC/DC Converters

P沟道MOSFET (8V - 60V)

Bipolar TTL Logic

Features  High Sink-Current Capability: 40mA  High Voltage Open-Collector Driver  Minimum breakdown voltage: 30V  Input Clamp Diodes minimize transmission-line effects  TTL compatible inputs  Direct drop-in replacement for obsolete components in long term programs.

Hex Buffers with High Voltage Open-Collector Outputs

General Description This device contains six independent gates each of which performs a buffer function. The open-collector outputs require external pull-up resistors for proper logical operation.

Bipolar TTL Logic

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with Open-Collector Outputs

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P-Channel Enhancement Mode MOSFET

文件：450.88 Kbytes Page：7 Pages