Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6808/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. AO6808 and AO6808L are electrically identical. -RoHS Compliant

Dual N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID =6 A (VGS = 4.5V) ● RDS(ON)

PHASE SHIFTER DC TO 2,4 AND 8 GHZ, COAXIAL

FEATURES • Type SMA Connectors Standard • Options from DC to 8Ghz • High Performance, Troughline Style Structure • Military Grade Materials and Processing • -40 to + 125º C Operating Temperature Range

DC TO 2, 4 AND 8 GHz, COAXIAL

文件：213.39 Kbytes Page：4 Pages

Stem actuated valve

文件：91.41 Kbytes Page：1 Pages