Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO6806 is Pb-free (meets ROHS & Sony 259 specifications). Fea

Dual N-Channel Enhancement Mode Field Effect Transistor

PHASE SHIFTER DC TO 2,4 AND 8 GHZ, COAXIAL

FEATURES • Type SMA Connectors Standard • Options from DC to 8Ghz • High Performance, Troughline Style Structure • Military Grade Materials and Processing • -40 to + 125º C Operating Temperature Range

DC TO 2, 4 AND 8 GHz, COAXIAL

FEATURES • Type SMA Connectors Standard • Options from DC to 8 GHz • High Performance, Trough line Style Structure • MIL Grade Materials and Processing • -40 to + 125ºC Operating Temperature Range

50 MHz to 525 MHz Quadrature Demodulator with Fractional-N PLL and VCO

文件：965.96 Kbytes Page：36 Pages

50 MHz to 525 MHz Quadrature Demodulator with Fractional-N PLL and VCO

文件：965.96 Kbytes Page：36 Pages

50 MHz to 525 MHz Quadrature Demodulator with Fractional-N PLL and VCO

文件：965.96 Kbytes Page：36 Pages