N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO6702 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6702 is Pb-free (meets ROHS &

N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO6702 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6702 is Pb-free (meets ROHS &

PHASE SHIFTER DC TO 2, 4 AND 8 GHZ, COAXIAL HIGH POWER

FEATURES • Type N Connectors Standard • Options from DC to 8Ghz • High Power, Trombone Style Coaxial Structure • Military Grade Materials and Processing • -40 to + 125º C Operating Temperature Range

High Current Toroid Inductors (with header)

Special Features • Low radiation • High current capacity • High inductance • Mounted on UL 94V-0 rated header • Fixed pins for easy PCB insertion • Operating temperature: -55 to +105 °C

DC TO 2, 4 AND 8 GHz, COAXIAL HIGH POWER

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HDTV, 75 Ohm BNC Connector for RG-59/U

文件：51.72 Kbytes Page：2 Pages

64-bit PCI Hub

文件：2.54611 Mbytes Page：214 Pages