Complementary Enhancement Mode Field Effect Transistor

General Description The AO6603 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6603 is Pb-free (meets ROHS & Sony 259 specifications). AO6

Complementary Enhancement Mode Field Effect Transistor

Complementary Enhancement Mode Field Effect Transistor

General Description The AO6603 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6603 is Pb-free (meets ROHS & Sony 259 specifications). AO6

PHASE SHIFTER DC TO 2, 4 AND 8 GHZ, COAXIAL HIGH POWER

FEATURES • Type N Connectors Standard • Options from DC to 8Ghz • High Power, Trombone Style Coaxial Structure • Military Grade Materials and Processing • -40 to + 125º C Operating Temperature Range

PHASE SHIFTER DC TO 2, 4 AND 8 GHz, COAXIAL HIGH POWER

文件：175.77 Kbytes Page：3 Pages

1200 MHz to 3600 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

文件：834.01 Kbytes Page：32 Pages

2100 MHz to 2600 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

文件：504.01 Kbytes Page：24 Pages

2100 MHz to 2600 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

文件：504.01 Kbytes Page：24 Pages