Complementary Enhancement Mode Field Effect Transistor

General Description The AO6603 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6603 is Pb-free (meets ROHS & Sony 259 specifications). AO6

Complementary Enhancement Mode Field Effect Transistor

General Description The AO6603 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6603 is Pb-free (meets ROHS & Sony 259 specifications). AO6

PHASE SHIFTER DC TO 2, 4 AND 8 GHZ, COAXIAL HIGH POWER

FEATURES • Type N Connectors Standard • Options from DC to 8Ghz • High Power, Trombone Style Coaxial Structure • Military Grade Materials and Processing • -40 to + 125º C Operating Temperature Range

PHASE SHIFTER DC TO 2, 4 AND 8 GHz, COAXIAL HIGH POWER

文件：175.77 Kbytes Page：3 Pages

1200 MHz to 3600 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

文件：834.01 Kbytes Page：32 Pages

2100 MHz to 2600 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

文件：504.01 Kbytes Page：24 Pages

2100 MHz to 2600 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

文件：504.01 Kbytes Page：24 Pages