P-Channel Enhancement Mode Field Effect Transistor

General Description The AO5401E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.AO5401E and AO5401EL are electrically identical. -RoHS complian

P-Channel Enhancement Mode Field Effect Transistor

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO5401E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.AO5401E and AO5401EL are electrically identical. -RoHS complian

丝印代码：-2L；PNP high-voltage transistor

DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: PMBT5550. FEATURES • Low current (max. 300 mA) • High voltage (max. 150 V). APPLICATIONS • Switching and amplification in high voltage applications such as telephony.

PNP high-voltage transistor

DESCRIPTION PNP high-voltage transistor in a SOT323 plastic package. NPN complements: PMST5550 and PMST5551. FEATURES • Low current (max. 300 mA) • High voltage (max. 150 V). APPLICATIONS • General purpose • Telephony.

丝印代码：P33；SMALL SIGNAL PNP TRANSISTORS

■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ GENERAL PURPOSE AND HIGH VOLTAGE AMPLIFIER

MEDIUM POWER AMPLIFIER

MEDIUM POWER AMPLIFIER ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE

High Efficiency LED in 5 mm Tinted Diffused Package

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