Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4916A uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronou

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4916A uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronou

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 19.2 VOLT NOMINAL ZENER VOLTAGE + 5 • LOW NOISE • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED

PNP Small Signal General Purpose Amplifiers & Switches

PNP Small Signal General Purpose Amplifiers & Switches

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series

SMPS-IC with MOSFET Driver Output

Features • High clock frequency • Low current drain • High reference accuracy • All monitoring functions