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AO4832

丝印代码:AO4832;30V N-Channel MOSFET

Product Summary VDS 30V ID (at VGS=10V) 10A RDS(ON) (at VGS=10V)

UMW

友台半导体

AO4832

丝印代码:AO4832;30V Dual N-Channel MOSFET

General Description The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Product Summary VDS 30V ID (at VGS=10V) 10A RDS(ON) (at VGS=10V)

EVVOSEMI

翊欧

AO4832

低压MOSFET (12V - 30V)

30V Dual N-Channel MOSFET

AOS

美国万代

AO4832

丝印代码:4832;Dual N-Channel Enhancement Mode Power MOSFET

RDs(ON)=16 mQ @VGS=10V RDS(ON) =20 mQ @VGS=4.5V Super high density cell design for extremely low RDs(ON) Exceptional on-resistance and maximum DC current capability

TECHPUBLIC

台舟电子

AO4832

Dual N-channel Enhancement Mode Power MOSFET

Features VDS= 30V, ID= 12 A RDS(ON)

BYCHIP

百域芯

AO4832

N-Channel 0-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

VBSEMI

微碧半导体

AO4832

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4832 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4832 is Pb-free (meets ROHS & Sony 259 sp

AOSMD

万国半导体

AO4832

丝印代码:4832;Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 10A (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

AO4832

30V Dual N-Channel MOSFET

文件:552.01 Kbytes Page:6 Pages

AOSMD

万国半导体

AO4832

场效应管(MOSFET)

TECHPUBLIC

台舟电子

丝印代码:4832;Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 10A (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4832 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4832 is Pb-free (meets ROHS & Sony 259 sp

AOSMD

万国半导体

30V Dual N-Channel MOSFET

文件:552.01 Kbytes Page:6 Pages

AOSMD

万国半导体

LCD MODULE

MECHANICAL DATA

AZDISPLAYS

RTC Module With 32Kx8 NVSRAM

文件:678.61 Kbytes Page:18 Pages

TI

德州仪器

Digitally Controlled Tone and Volume Circuit with Stereo Audio Power Amplifier, Microphone Preamp Stage and National 3D Sound

文件:688.53 Kbytes Page:22 Pages

NSC

国半

Digitally Controlled Tone and Volume Circuit with Stereo Audio Power Amplifier, Microphone Preamp Stage and National 3D Sound

文件:688.53 Kbytes Page:22 Pages

NSC

国半

Digitally Controlled Tone and Volume Circuit with Stereo Audio Power Amplifier, Microphone Preamp Stage and National 3D Sound

文件:688.53 Kbytes Page:22 Pages

NSC

国半

AO4832产品属性

  • 类型

    描述

  • Package:

    SO8

  • Configuration:

    Dual

  • Polarity:

    N

  • VDS (V):

    30

  • 10V:

    13

  • 4.5V:

    17.50

  • VGS (±V):

    20

  • ID @ 25°C (A):

    10

  • PD @ 25°C (W):

    2

  • Qg (4.5V)(nC):

    6.60

  • Qg (10V)(nC):

    14

  • VGS(th) max (V):

    2.50

  • Ciss (pF):

    760

  • Coss (pF):

    125

  • Crss (pF):

    70

  • Qgd (nC):

    3

  • tD(on) (ns):

    4.40

  • tD(off) (ns):

    17

  • Trr (ns):

    7

  • Qrr (nC):

    8

  • ESD Diode:

    No

  • Tj max (°C):

    150

  • Qualification:

    Industrial

更新时间:2026-5-20 10:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AOS美国万代
24+
SOP-8
888000
AOS代理商 优势供应美国万代AOS全系列
AOS/万代
20+
SO-8
120000
原装正品 可含税交易
AOS/万代
2019+
SOP8
18000
原厂渠道 可含税出货
AOS(万代)
26+
10548
原厂订货渠道,支持账期,一站式服务!
AOS/万代
23+
SO-8
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
AOS/万代
2021+
SOIC-8
9000
原装现货,随时欢迎询价
AOS
23+
SOP8
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
AOS/万代
23+/24+
SOP8
9865
原盒原标 正品现货 价格美丽 终端BOM表可配单
AOS/万代
25+
SOP-8
20300
AOS/万代原装特价AO4832即刻询购立享优惠#长期有货
AOS/万代
2021+
SOP8
12000
勤思达 只做原装正品 现货供应

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