型号 功能描述 生产厂家 企业 LOGO 操作
AO4832

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4832 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4832 is Pb-free (meets ROHS & Sony 259 sp

AOSMD

万国半导体

AO4832

N-Channel 0-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

VBSEMI

微碧半导体

AO4832

Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 10A (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

AO4832

Dual N-Channel Enhancement Mode Power MOSFET

RDs(ON)=16 mQ @VGS=10V RDS(ON) =20 mQ @VGS=4.5V Super high density cell design for extremely low RDs(ON) Exceptional on-resistance and maximum DC current capability

TECHPUBLIC

台舟电子

AO4832

30V N-Channel MOSFET

Product Summary VDS 30V ID (at VGS=10V) 10A RDS(ON) (at VGS=10V)

UMW

友台半导体

AO4832

30V Dual N-Channel MOSFET

General Description The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Product Summary VDS 30V ID (at VGS=10V) 10A RDS(ON) (at VGS=10V)

EVVOSEMI

翊欧

AO4832

Dual N-channel Enhancement Mode Power MOSFET

Features VDS= 30V, ID= 12 A RDS(ON)

Bychip

百域芯

AO4832

场效应管(MOSFET)

TECHPUBLIC

台舟电子

AO4832

低压MOSFET (12V - 30V)

AOS

美国万代

AO4832

30V Dual N-Channel MOSFET

文件:552.01 Kbytes Page:6 Pages

AOSMD

万国半导体

Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 10A (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4832 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4832 is Pb-free (meets ROHS & Sony 259 sp

AOSMD

万国半导体

30V Dual N-Channel MOSFET

文件:552.01 Kbytes Page:6 Pages

AOSMD

万国半导体

LCD MODULE

LCD MODULE

AZDISPLAYS

NYLON M/F HEX STANDOFF

文件:80.39 Kbytes Page:1 Pages

KEYSTONE

Keystone Electronics Corp.

Metal Film Resistors Metal Film Resistors

文件:425.84 Kbytes Page:3 Pages

TTELEC

Ideal resistor for precision instrumentation

文件:410.61 Kbytes Page:3 Pages

TTELEC

Ultra Precision Bulk Metal Film Resistors

文件:132.97 Kbytes Page:2 Pages

WELWYN

AO4832产品属性

  • 类型

    描述

  • 型号

    AO4832

  • 功能描述

    MOSFET 2N-CH 30V 10A 8SOIC

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 阵列

  • 系列

    -

  • 产品目录绘图

    8-SOIC Mosfet Package

  • 标准包装

    1

  • 系列

    - FET

  • 2 个 N 沟道(双) FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    60V 电流 - 连续漏极(Id) @ 25°

  • C

    3A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    75 毫欧 @ 4.6A,10V Id 时的

  • Vgs(th)(最大)

    3V @ 250µA 闸电荷(Qg) @

  • Vgs

    20nC @ 10V 输入电容(Ciss) @

  • Vds

    - 功率 -

  • 最大

    1.4W

  • 安装类型

    表面贴装

  • 封装/外壳

    PowerPAK? SO-8

  • 供应商设备封装

    PowerPAK? SO-8

  • 包装

    Digi-Reel®

  • 产品目录页面

    1664(CN2011-ZH PDF)

  • 其它名称

    SI7948DP-T1-GE3DKR

更新时间:2025-11-23 14:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
友台UMW
25+
DIP
3000
国产替换现货降本
AOS/万代
25+
SOP-8
20300
AOS/万代原装特价AO4832即刻询购立享优惠#长期有货
AOSMD
22+
SOP-8
8200
原装现货库存.价格优势!!
AOS
24+
SOP8
8000
新到现货,只做全新原装正品
AOS
15+
SOP8
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
AOS/万代
15+
SOP-8
3000
只做原装正品
AOS/万代
2223+
SOP-8
26800
只做原装正品假一赔十为客户做到零风险
AOS
24+
SOIC-8
5650
公司原厂原装现货假一罚十!特价出售!强势库存!
AOS/万代
2025+
SO-8
5000
原装进口价格优 请找坤融电子!
NK/南科功率
2025+
SOP--8
13145
国产南科平替供应大量

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