型号 功能描述 生产厂家 企业 LOGO 操作
AO4832

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4832 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4832 is Pb-free (meets ROHS & Sony 259 sp

AOSMD

万国半导体

AO4832

N-Channel 0-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

VBSEMI

微碧半导体

AO4832

Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 10A (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

AO4832

Dual N-Channel Enhancement Mode Power MOSFET

RDs(ON)=16 mQ @VGS=10V RDS(ON) =20 mQ @VGS=4.5V Super high density cell design for extremely low RDs(ON) Exceptional on-resistance and maximum DC current capability

TECHPUBLIC

台舟电子

AO4832

30V N-Channel MOSFET

Product Summary VDS 30V ID (at VGS=10V) 10A RDS(ON) (at VGS=10V)

UMW

友台半导体

AO4832

30V Dual N-Channel MOSFET

General Description The AO4832 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Product Summary VDS 30V ID (at VGS=10V) 10A RDS(ON) (at VGS=10V)

EVVOSEMI

翊欧

AO4832

Dual N-channel Enhancement Mode Power MOSFET

Features VDS= 30V, ID= 12 A RDS(ON)

BYCHIP

百域芯

AO4832

场效应管(MOSFET)

TECHPUBLIC

台舟电子

AO4832

低压MOSFET (12V - 30V)

AOS

美国万代

AO4832

30V Dual N-Channel MOSFET

文件:552.01 Kbytes Page:6 Pages

AOSMD

万国半导体

Dual N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 10A (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4832 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4832 is Pb-free (meets ROHS & Sony 259 sp

AOSMD

万国半导体

30V Dual N-Channel MOSFET

文件:552.01 Kbytes Page:6 Pages

AOSMD

万国半导体

LCD MODULE

LCD MODULE

AZDISPLAYS

NYLON M/F HEX STANDOFF

文件:80.39 Kbytes Page:1 Pages

KEYSTONE

Keystone Electronics Corp.

Metal Film Resistors Metal Film Resistors

文件:425.84 Kbytes Page:3 Pages

TTELEC

Ideal resistor for precision instrumentation

文件:410.61 Kbytes Page:3 Pages

TTELEC

Ultra Precision Bulk Metal Film Resistors

文件:132.97 Kbytes Page:2 Pages

WELWYN

AO4832产品属性

  • 类型

    描述

  • 型号

    AO4832

  • 功能描述

    MOSFET 2N-CH 30V 10A 8SOIC

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 阵列

  • 系列

    -

  • 产品目录绘图

    8-SOIC Mosfet Package

  • 标准包装

    1

  • 系列

    - FET

  • 2 个 N 沟道(双) FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    60V 电流 - 连续漏极(Id) @ 25°

  • C

    3A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    75 毫欧 @ 4.6A,10V Id 时的

  • Vgs(th)(最大)

    3V @ 250µA 闸电荷(Qg) @

  • Vgs

    20nC @ 10V 输入电容(Ciss) @

  • Vds

    - 功率 -

  • 最大

    1.4W

  • 安装类型

    表面贴装

  • 封装/外壳

    PowerPAK? SO-8

  • 供应商设备封装

    PowerPAK? SO-8

  • 包装

    Digi-Reel®

  • 产品目录页面

    1664(CN2011-ZH PDF)

  • 其它名称

    SI7948DP-T1-GE3DKR

更新时间:2026-3-1 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AOS
2016+
SOP8
4097
只做原装,假一罚十,公司可开17%增值税发票!
AOS/万代
23+
SO-8
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
AO
14+
SOP8
1329
一级代理,专注军工、汽车、医疗、工业、新能源、电力
AOSMD
22+
SOP-8
8200
原装现货库存.价格优势!!
AOS/万代
2019+
SOP8
18000
原厂渠道 可含税出货
AOS/万代
23+
SOP-8
24190
原装正品代理渠道价格优势
AOS/万代
25+
SOIC-8
30000
房间原装现货特价热卖,有单详谈
AOS
26+
SOIC-8
86720
全新原装正品价格最实惠 假一赔百
AOS
2430+
SOP8
8540
只做原装正品假一赔十为客户做到零风险!!
AOS/万代
24+
SOP-8
9600
原装现货,优势供应,支持实单!

AO4832数据表相关新闻