Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4812A uses advanced trench technology to provide excellent RDS(ON)and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. AO4812A is Pb-free (meets ROHS & Sony 259 specifications). AO4

30V N+N MOSFET

MOSFET

Dual N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Power MOSFET

Description The 4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● High power and current handing capability ● Lead

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