Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4812A uses advanced trench technology to provide excellent RDS(ON)and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. AO4812A is Pb-free (meets ROHS & Sony 259 specifications). AO4

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description\nThe AO4812A uses advanced trench technology to provide excellent RDS(ON)and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. AO4812A is Pb-free (meets ROHS & Sony 259 specifications). AO4812AL VDS(V) = 30V\nID= 6.9A (VGS= 10V)\nRDS(ON) < 28mΩ(VGS= 10V)\nRDS(ON)< 42mΩ(VGS= 4.5V);

30V N+N MOSFET

MOSFET

DUAL OUTPUT, 2 WATT

DESCRIPTION DRD dual output DC/DC converters offer excellent regulation and isolation in an industry standard package. Available in several input versions, the DRD is perfect for industrial, datacom, or telecom applications. The DRD features short circuit protection and 500 VDC isolation. Please

VERY LOWDROP VOLTAGE REGULATORS

DESCRIPTION L4800 series devices are voltage regulators with a very low voltage drop (typically 0.4V at full rated current), output current up to 400mA, low quiescent current and comprehensiveon-chip protection.The se devices are protected against load dump and field decay transients of±60V, pola

VERY LOWDROP VOLTAGE REGULATORS

DESCRIPTION L4800 series devices are voltage regulators with a very low voltage drop (typically 0.4V at full rated current), output current up to 400mA, low quiescent current and comprehensiveon-chip protection.The se devices are protected against load dump and field decay transients of±60V, pola

VERY LOWDROP VOLTAGE REGULATORS

DESCRIPTION L4800 series devices are voltage regulators with a very low voltage drop (typically 0.4V at full rated current), output current up to 400mA, low quiescent current and comprehensiveon-chip protection.The se devices are protected against load dump and field decay transients of±60V, pola

DUAL OUTPUT, 5 WATT

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