Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4800B/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. Standard Product AO4800B/L is Pb-free (meets ROHS & Sony 25

3 V Stereo Headphone Power Amplifier

Overview The LA4800V is a headphone stereo power amplifier IC that features a high signal-to-noise ratio, high ripple rejection, low distortion and low current consumption, making it ideal for portable CD players. Features • 96 dB (typ) high S/N ratio at 7 µV • 76 dB (typ) high ripple rejectio

3 V Stereo Headphone Power Amplifier

Overview The LA4800V is a headphone stereo power amplifier IC that features a high signal-to-noise ratio, high ripple rejection, low distortion and low current consumption, making it ideal for portable CD players. Features • 96 dB (typ) high S/N ratio at 7 µV • 76 dB (typ) high ripple rejectio

Thin Type Phototransistor

■ Features 1. Thin type package (Thickness : 1.5mm ) 2. Visible light cut-off type : PT4800F/PT4810F/PT4850F 3. Single phototransistor output : PT4800/PT4800F/PT4850F Darlington phototransistor output: PT4810/PT4810F 4. Thin type ■ Applications 1. VCRs 2. Floppy disk drives

丝印代码：4800；N-channel enhancement mode field-effect transistor

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1. Low gate charge 2. Surface mounted package 3. Low on-state resistance 4. Fast switching.

Vertical deflection circuit for monitor applications

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