| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AO4720 | N-Channel Enhancement Mode Field Effect Transistor General Description SRFET TM The AO4720 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Product Summary | AOSMD 万国半导体 |   | |
AO4720 | 丝印代码：4720；N-Channel MOSFET ■ Features ● VDS (V) = 30V ● ID = 13 A (VGS = 10V) ● RDS(ON) | KEXIN 科信电子 | | |
AO4720 | MOSFET：N-Channel AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi | AOS 美国万代 | | |
AO4720 | 30V N-Channel MOSFET 文件：204.78 Kbytes Page：6 Pages | AOSMD 万国半导体 | | |
30V N-Channel MOSFET 文件：204.78 Kbytes Page：6 Pages | AOSMD 万国半导体 | | ||
256-bit, 1-bit per word random access memories DESCRIPTION The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs. The memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both type | PHILIPS 飞利浦 | | ||
256-bit, 1-bit per word random access memories DESCRIPTION The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs. The memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both type | PHILIPS 飞利浦 | | ||
256-bit, 1-bit per word random access memories DESCRIPTION The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs. The memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both type | PHILIPS 飞利浦 | | ||
256-bit, 1-bit per word random access memories DESCRIPTION The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs. The memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both type | PHILIPS 飞利浦 | | ||
256-bit, 1-bit per word random access memories DESCRIPTION The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs. The memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both type | PHILIPS 飞利浦 | |
AO4720产品属性
- 类型
描述
- Status：
Obsolete
- Recommended Replacement：
AO4752
- Package：
SOIC-8
- Configuration：
Single - N
- Vds/V：
30
- Vgs/V：
20
- Id(A)(25℃)：
13
- Id(A)(75℃)：
10.5
- Pd(W)(25℃)：
3.1
- Pd(W)(75℃)：
2
- Rds (on) mΩ max(10V)：
11
- Rds (on) mΩ max(4.5V)：
17.5
- Qg (nC)：
10.4
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS |
2011 |
SOP8 |
30000 |
全新原装 正品现货 |
|||
AOS/万代 |
25+ |
SOP-8 |
32107 |
AOS/万代全新特价AO4720即刻询购立享优惠#长期有货 |
|||
AOS/万代 |
23+ |
SOP-8 |
50000 |
只做原装正品 |
|||
AOS |
2023+ |
SOP-8 |
5800 |
进口原装,现货热卖 |
|||
AOS原装 |
2447 |
SOP8 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
AOS/万代 |
23+ |
SOP-8 |
24190 |
原装正品代理渠道价格优势 |
|||
AOS/万代 |
23+ |
SOP8 |
50000 |
全新原装正品现货,支持订货 |
|||
AOS(万代) |
25+ |
标准封装 |
39996 |
我们只是原厂的搬运工 |
|||
AOS |
26+ |
Sod-123 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
Alpha & Omega Semiconductor In |
22+ |
8SOIC |
9000 |
原厂渠道,现货配单 |
AO4720芯片相关品牌
AO4720规格书下载地址
AO4720参数引脚图相关
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DdatasheetPDF页码索引
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