256-bit, 1-bit per word random access memories

DESCRIPTION The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs. The memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both type

N-Channel Enhancement Mode Field Effect Transistor

General Description SRFET TM The AO4720 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Product Summary

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 13 A (VGS = 10V) ● RDS(ON)

Quick Connect Terminals

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30V N-Channel MOSFET

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System Reset IC

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