型号 功能描述 生产厂家 企业 LOGO 操作
AO4712

N-Channel Enhancement Mode Field Effect Transistor

General Description SRFET™ The AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO47

AOSMD

万国半导体

AO4712

N-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Operation • 100 Rg Tested • 100 UIS Tested APPLICATIONS • Notebook CPU Core - High-Side Switch

VBSEMI

微碧半导体

AO4712

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 13 A (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

AO4712

30V N-Channel MOSFET

文件:283.9 Kbytes Page:6 Pages

AOSMD

万国半导体

AO4712

MOSFET:N-Channel

AOS

美国万代

30V N-Channel MOSFET

文件:283.9 Kbytes Page:6 Pages

AOSMD

万国半导体

DUAL SPDT ANALOG SWITCH 0.4廓 NC AND 0.5廓 NO, LOW-VOLTAGE, SINGLE-SUPPLY

DESCRIPTION The A4712 is a Dual Wide-Bandwidth, fast single-pole double-throw (SPDT) CMOS switch featuring an On-Resistance of 0.4 ohm at VDD=2.7V and wide power supply range from 1.65V to 5.5V. The A4712 can be used as an analog switch or as a low-delay bus switch. Break-before-make function f

AITSEMI

创瑞科技

Power Path with Input Current Limit and Capacitor Charger

Features • VCC Range: 2.5V – 5.5V • Input Current Limits: ▪ 150mA - 2400mA ▪ ±10 Current Accuracy at 2A Input Current Limit Setting • Low Quiescent Current: ▪ 70μA Typical (VCC Input) ▪ 12μA Typical (OUT Input) • Under-Voltage Lockout • Integrated Discharge Path for SYS (to System Load)

SKYWORKS

思佳讯

Locking Devices

文件:3.83504 Mbytes Page:81 Pages

COOPER

Vinyl Tape

文件:32.5 Kbytes Page:3 Pages

3M

3M??Vinyl Tape 4712 (Linered)

文件:127.47 Kbytes Page:4 Pages

3M

AO4712产品属性

  • 类型

    描述

  • 型号

    AO4712

  • 功能描述

    MOSFET N-CH 30V 11.2A 8-SOIC

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    SRFET™

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-11-22 10:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AOS(万代)
24+
标准封装
17388
我们只是原厂的搬运工
AOS/万代
2019+
SOP8
3333
原厂渠道 可含税出货
AOS
SOP8
800
正品原装--自家现货-实单可谈
AOS/万代
24+
SOP8
21574
郑重承诺只做原装进口现货
AOS/万代
2402+
SOP-8
8324
原装正品!实单价优!
ALPHA
23+
SOP-8
6000
专业配单保证原装正品假一罚十
AOS/美国万代
24+
SOP-8
3000
全新原装现货 优势库存
AO/万代
23+/24+
SOP-8
9865
原装MOS管(场效应管).
AOS
24+
SOP8
9600
原装现货,优势供应,支持实单!
ALPHA
22+
SO8
5000
原装现货库存.价格优势!!

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