Complementary Enhancement Mode Field Effect Transistor

General Description The AO4616 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications.Standard Product AO4616 is Pb-free (meets ROHS & Sony 259 specifications). AO4616L is a Green Produ

N and P-Channel Enhancement Mode Power MOSFET

Description The 4616 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =8.0A RDS(ON)

Ultrahigh Precision Adjustable Current Limited Load Switch with Fault Flag

Features  Input voltage: 2.4 V to 5.5 V  Programmable over-current limit setting: 300 mA to 1.6 A  ±5 current limit precision at 750 mA  Fast transient response: 2 s response to short circuit  Low quiescent current:  10 A typical while enabled  1 A maximum with switch off  130 m

Heyco®-Tite EMC Brass Liquid Tight Cordgrips

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VHB Tape - Specialty Tapes

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Quick exhaust valve

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