Complementary Enhancement Mode Field Effect Transistor

General Description The AO4613 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. It is ESD protected. Standard product AO4613 is Pb-free (m

Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 7.2 A (VGS = 10V) RDS(ON)

30V Dual P N-Channel MOSFET

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MOSFET：Complementary

Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 7.2 A (VGS = 10V) RDS(ON)

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4613 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. It is ESD protected. Standard product AO4613 is Pb-free (m

30V Dual P N-Channel MOSFET

文件：219.97 Kbytes Page：7 Pages

Thick Film Conformal SIP

Features ■ Lead free version available (see How to Order “Termination” option) ■ RoHS compliant (lead free version)* ■ Low profile is compatible with DIPs ■ Wide assortment of pin packages enhances design flexibility ■ Ammo-pak packaging available ■ Recommended for rosin flux and

Micrograbber Test Clip

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Heyco®-Tite EMC Brass Liquid Tight Cordgrips

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Networks

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Networks

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