Complementary Enhancement Mode Field Effect Transistor

General Description The AO4610 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n-channel FET to minimize body diode losses. Standard Pr

Complementary Enhancement Mode Field Effect Transistor

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4610 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n-channel FET to minimize body diode losses. Standard Pr

Double Ended Mold Type Infrared Emitting Diode

■ Features 1. Compact double ended mold package (Packaging area : 37 smaller than GL480) 2. Narrow beam angle (Half intensity angle : ± 13˚ ) (Radiant intensity : 3 times as large as GL460) 3. High output type (GL4610) 4. Taped model, 2,000 pieces/reel ■ Applications 1. Floppy disk dr

Double Ended Mold Type Phototransistors

Features 1. Compact double ended mold package (Packaging area : 37 smaller than PT480) 2. Narrow beam angle (Half intensity angle : ± 20˚ Light sensitivity : 3 times as large as PT460 series) 3. Darlington output type (PT4610), visible light cut-off type (PT4600F/4610F/4650F), VCR tape end dete

Bipolar Integrated Circuit with Photodetection Function

For infrared remote control systems Features Extension distance is 8 m or more External parts not required Adoption of visible light cutoff resin

Double Ended Mold Type Phototransistors

Features 1. Compact double ended mold package (Packaging area : 37 smaller than PT480) 2. Narrow beam angle (Half intensity angle : ± 20˚ Light sensitivity : 3 times as large as PT460 series) 3. Darlington output type (PT4610), visible light cut-off type (PT4600F/4610F/4650F), VCR tape end dete

0.400-INCH SEVEN SEGMENT DISPLAYS

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