Complementary Enhancement Mode Field Effect Transistor

General Description The AO4610 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n-channel FET to minimize body diode losses. Standard Pr

Complementary Enhancement Mode Field Effect Transistor

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4610 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n-channel FET to minimize body diode losses. Standard Pr

High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

Networks

Material # 4610M-LF Series Product Line Networks

Networks

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Varnished Chokes

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High Q, high self-resonant frequency

文件：108.28 Kbytes Page：1 Pages