Complementary Enhancement Mode Field Effect Transistor

General Description The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4609 is Pb-free (meets ROHS & Sony

Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 8.5 A (VGS = 10V) RDS(ON)

Complementary Enhancement Mode Field Effect Transistor

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MOSFET：Complementary

Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 30V ID = 8.5 A (VGS = 10V) RDS(ON)

Complementary Enhancement Mode Field Effect Transistor

文件：690.95 Kbytes Page：12 Pages

High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

Heyco®-Tite EMC Brass Liquid Tight Cordgrips

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TO-3 POWER TRANSISTOR SOCKET & MOUNTING KITS

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Networks

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Networks

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