Complementary Trench MOSFET

■ Features ● N-Channel： VDS=30V ID=6A RDS(ON)

P-Chanel and N-Channel MOSFET use advanced trench technology

Description： This P-Chanel and N-Channel MOSFET use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) N-Channel: VDS=30V,ID=6.5A,RDS(ON)

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Product Summary N-Channel

30V NP-Channel Enhancement Mode MOSFET

General Features VDS = 30V ID =6 A RDS(ON)

30V NP-Channel Enhancement Mode MOSFET

Description The AO4406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =6 A RDS(ON)

场效应管

场效应管(MOSFET)

N-and P-Channel Enhancement Mode Power MOSFET

30V Complementary MOSFET

文件：551.43 Kbytes Page：9 Pages

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

30V Complementary MOSFET

文件：551.43 Kbytes Page：9 Pages

N and P-Channel Enhancement Mode Power MOSFET

Description The 4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6.9A RDS(ON)

High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

Binary reduction valve

文件：99.4 Kbytes Page：1 Pages

N- and P-Channel 30 V (D-S) MOSFET

文件：1.22669 Mbytes Page：14 Pages

Complementary High Density Trench MOSFET

文件：317.57 Kbytes Page：7 Pages