丝印代码：4496；N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4496/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. AO4496 and AO4496L are electrically identical. -RoHS Compliant -AO4496L is Halogen Free Features VDS (V) = 3

丝印代码：4496；30V N-Channel MOSFET

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N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4496/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. AO4496 and AO4496L are electrically identical. -RoHS Compliant -AO4496L is Halogen Free Features VDS (V) = 3

DC-DC converter application

General Description The AO4496 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. Product Summary VDS (V) = 30V ID = 10A (VGS = 10V) RDS(ON)

丝印代码：4496；N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 10 A (VGS = 10V) ● RDS(ON)

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