型号 功能描述 生产厂家&企业 LOGO 操作
AO4443

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4443 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4443 is Pb-free (meets ROHS & Sony 259 specifications). AO4443L is a Green Pr

AOSMD

万国半导体

AO4443

P-Channel MOSFET

■ Features ● VDS (V) =-40V ● ID =-6.5 A (VGS =-10V) ● RDS(ON)

KEXIN

科信电子

AO4443

40V P-Channel MOSFET

General Description The AO4443 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS -40V ID (

WHXPCB

万和兴电子

AO4443

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

VBSEMI

微碧半导体

AO4443

-40V P-Channel Enhancement Mode MOSFET

General Features VDS = -40V ID = -8 A RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

AO4443

-40V P-Channel Enhancement Mode MOSFET

Description The AO4443 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -40V ID = -8 A RDS(ON)

EVVOSEMI

翊欧

AO4443

40V P-Channel MOSFET

文件:314.33 Kbytes Page:5 Pages

AOSMD

万国半导体

P-Channel MOSFET

■ Features ● VDS (V) =-40V ● ID =-6.5 A (VGS =-10V) ● RDS(ON)

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4443 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4443 is Pb-free (meets ROHS & Sony 259 specifications). AO4443L is a Green Pr

AOSMD

万国半导体

40V P-Channel MOSFET

文件:314.33 Kbytes Page:5 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

Description The ACE4443B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features • VDS(V)=-40V • ID=-6A (VGS=-10V) • RDS(ON)

ACE

DELAY MODULES,TTL,SURFACE MOUNTED

文件:137.17 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Fail-safe feature of the RHFLVDS32A and RHFLVDSR2D2

文件:97.85 Kbytes Page:3 Pages

STMICROELECTRONICS

意法半导体

AO4443产品属性

  • 类型

    描述

  • 型号

    AO4443

  • 功能描述

    MOSFET P-CH 40V 6A 8SOIC

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-8-20 18:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AOS
21+
SOP8
2500
AOS
2018+
SOP8
11256
只做进口原装正品!假一赔十!
AOS/万代
21+
12820
只做原装,质量保证
AOS/万代
25+
SOP-8
32069
AOS/万代全新特价AO4443即刻询购立享优惠#长期有货
AOS(万代)/UMW(友台)
24+
SOP-8
5000
诚信服务,绝对原装原盘。
AOS
24+
SOP8
8510
绝对原装现货,价格低,欢迎询购!
AOS
24+
SOP-8
30000
公司新到进口原装现货假一赔十
AOS/万代
24+
SOP-8
498203
免费送样原盒原包现货一手渠道联系
Bychip
23+
SOP8
10000
高品质替代,技术支持,参数选型
AOS
1709+
SOP8
79999
优势

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