MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

36V N-Channel MOSFET

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36V N-Channel MOSFET

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N-Channel MOSFET

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N-Channel MOSFET

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PNP Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =4.7KΩ, R2=47KΩ) • Complement to FJN3314R

QUAD T1/E1 LINE INTERFACE DEVICE

FEATURES • Integrates four duplex DSX-1 or CEPT E1 compatible line interface circuits in a single monolithic device. Line format is selected on a per-device basis. • Provides clock recovery and line performance monitoring in the receivers. • Provides jitter attenuation and programmable line

QUAD T1/E1 LINE INTERFACE DEVICE

FEATURES • Integrates four duplex DSX-1 or CEPT E1 compatible line interface circuits in a single monolithic device. Line format is selected on a per-device basis. • Provides clock recovery and line performance monitoring in the receivers. • Provides jitter attenuation and programmable line

Silicon NPN(PNP) epitaxial planer transistor

Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.

Silicon NPN(PNP) epitaxial planer transistor

Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits ■ Features • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half