30V P-Channel MOSFET

General Description The AO3421E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. Product Summary VDS -30V ID(at VGS=-10V)

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-3 A (VGS =-10V) ● RDS(ON)

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

P沟道MOSFET (8V - 60V)

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-3 A (VGS =-10V) ● RDS(ON)

P-Channel MOSFET

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P-Channel MOSFET

文件：2.05509 Mbytes Page：4 Pages

HALL-EFFECT, DIRECTION-DETECTION SENSORS

HALL-EFFECT, DIRECTION-DETECTION SENSORS The A3421xKA and A3422xKA Hall-effect, direction-detection sensors are a new generation of special-function integrated sensors that are capable of sensing the direction of rotation of a ring magnet. These transducers provide separate digital outputs that p

HALL-EFFECT, DIRECTION-DETECTION SENSORS

HALL-EFFECT, DIRECTION-DETECTION SENSORS The A3421xKA and A3422xKA Hall-effect, direction-detection sensors are a new generation of special-function integrated sensors that are capable of sensing the direction of rotation of a ring magnet. These transducers provide separate digital outputs that p

HALL-EFFECT, DIRECTION-DETECTION SENSORS

HALL-EFFECT, DIRECTION-DETECTION SENSORS The A3421xKA and A3422xKA Hall-effect, direction-detection sensors are a new generation of special-function integrated sensors that are capable of sensing the direction of rotation of a ring magnet. These transducers provide separate digital outputs that p

VFD CONTROLLER DRIVER

文件：399.54 Kbytes Page：13 Pages

VFD CONTROLLER DRIVER

文件：399.54 Kbytes Page：13 Pages