Transmission lines and terminations with Philips Advanced Logic families

INTRODUCTION With increasing systems speeds and faster logic families, interconnect characteristics have become significant. The signal transition times of faster families can increase transmission line effects on printed circuit board traces and cables. If not taken into consideration, signal de

UC3842 PROVIDES LOW-COST CURRENT MODE CONTROL

Dual 24 V, 6.0 mOhm High Side Switch

Overview The MC06XS4200 device is part of a 24 V high side switch product family with integrated control, and a high number of protective and diagnostic functions. It is designed for truck, bus, and industrial applications. The low RDS(ON) channels ( Features • Two fully-protected 6.0 mΩ (@ 25

Dual 6.0 m high-side switch

Overview The MC06XSD200 device is part of a 36 V high-side switch product family with integrated control and a high number of protective and diagnostic functions. It is designed for industrial applications. The low RDS(on) channels ( Features Two fully protected 6.0 mΩ (@ 25 °C) high-side s

Dual 10 m high-side switch

Dual 10 mOhm High Side Switch The 10XSD200 device is part of a 36 V dual high side switch product family with integrated control, and a high number of protective and diagnostic functions. It has been designed for industrial applications. The low RDS(ON) channels (

STMPE801 - Hardware Interface guide

文件：148.37 Kbytes Page：13 Pages

STMPE801 - Hardware Interface guide

Dual 16 mOhm High-Side Switch

文件：8.40509 Mbytes Page：2 Pages

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

PNP video transistor

DESCRIPTION PNP silicon transistor encapsulated in a 4-lead plastic SOT223 package. APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors.

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to t

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

Integrated Circuit TV Video Signal Processing Circuit