| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AN-9055 | Assembly Guidelines for MicroFET 2x2 Dual Packaging 文件：560.34 Kbytes Page：5 Pages | FAIRCHILD 仙童半导体 |   | |
55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Immunity to Single Event Effects (SEE) is combined with 100K RADs of total dose hardness to provide devices which are ideally suite | INTERSIL | | ||
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Immunity to Single Event Effects (SEE) is combined with 100K RADs of total dose hardness to provide devices which are ideally suite | INTERSIL | | ||
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | |
AN-9055芯片相关品牌
AN-9055规格书下载地址
AN-9055参数引脚图相关
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AN-9055数据表相关新闻
ANN-MB1-00
进口代理
2024-2-27ANT1204LL00R0918A
ANT1204LL00R0918A
2021-7-1ANL系列熔断器ANL-150原装现货BUSSMANN
深圳市大唐盛世半导体有限公司 手 机：17727572380 。 电 话：0755-83226739 Q Q:626839837。 微信号：15096137729
2019-12-14AN80M18RSP-5针，具有待机功能的低压差稳压器（500 MA型）
概述 该AN80MxxRSP系列是0.5甲，低压差具有待机功能电压稳压IC，具有低电流消耗，低噪音。 特点 待机消耗电流：最大。三渭甲 差电压：0.25 V 输出电压精度：卤3％ 5引脚表面安装封装 纹波抑制比：30分贝（六= 500千赫） 输出电压：1.8伏，1.9伏，2.0伏，2.1伏，2.2伏，2.5伏，2.7伏，2.8伏，2.9伏，3.0伏，3.1伏，3.2伏，3.3伏，3.4伏，3.5伏，3.6伏，4.8伏，4.9伏，5.0伏，5.1伏，5.2伏，5.3
2013-2-2AN80L19RMS-低压降型正输出电压稳压IC
概述 该系列是0.15 AN80LXXRMS输出低压降正电压输出型稳压IC与复位功能。 20个分类的输出电压，1.8伏，1.9伏，2.0伏，2.1伏，2.2伏，2.5伏，2.8伏，2.9伏，3.0伏，3.1伏，3.2伏，3.3伏，3.4伏，3.5伏，3.6伏，4.8伏，4.9伏，5.0伏，5.1 V和5.2 V的可用。此外，它是采用表面安装型封装（小型5引脚塑料封装），因此是它最适合于小型化和轻量化一套设备。 特点 ·最少的输入和输出电压差：0.4 V的最大。 ·高精密输出电压：（津贴：±3％） ·内置复位功能的终端
2013-2-2AN8025M-3针正输出低压差稳压器类型为50mA
概述 该AN8000系列三针低压差固定正输出单片稳压器。由于他们的权力消费可以最小化，他们是合适的电池稳定的电源和参考电压。十三输出电压的类型可供选择，为2V，2.5V和3V时，为3.5V（给- 92只），4V的，4.5V的，5V或6V的，为7V，8V的，8.5V时，9伏，和10V。 特点 •输入/输出电压差：为0.3V（最大） •输出电流高达50mA •低偏置电流;0.6毫安（典型值） •输出电压为2V，2.5V和3V供电，3.5V的（给- 92只），4V
2013-2-2
DdatasheetPDF页码索引
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