Recommendations for Control of Radiated Emissions with iCoupler Devices

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Recommendations for Control of Radiated Emissions with iCoupler Devices

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

Photo Interrupter

For contactless SW, object detection Outline ON1109 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to f

RECTIFIER DIODE

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