| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AMS3100 | ADJUSTABLE MICROPOWER VOLTAGE REFERENCE DIODE GENERAL DESCRIPTION The AMS3100 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating from 1.24V to 5.3V and over a 10µA to 20mA current range. AMS3100 is trimmed at wafer test level to optimize the temperature | ADMOS |   | |
AMS3100 | ADJUSTABLE MICROPOWER VOLTAGE REFERENCE DIODE | ADMOS | | |
AMS3100 | MICROPOWER VOLTAGE REFERENCE 文件：64.819 Kbytes Page：6 Pages | ADMOS | | |
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-1.2 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 10µA to 20mA current range. AMS3100-1.2 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-1.2 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 10µA to 20mA current range. AMS3100-1.2 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
Battery Powered Systems GENERAL DESCRIPTION The AMS3100-1.2 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 10µA to 20mA current range. AMS3100-1.2 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
Battery Powered Systems GENERAL DESCRIPTION The AMS3100-1.2 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 10µA to 20mA current range. AMS3100-1.2 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-1.2 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 10µA to 20mA current range. AMS3100-1.2 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-1.2 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 10µA to 20mA current range. AMS3100-1.2 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
Battery Powered Systems GENERAL DESCRIPTION The AMS3100-1.2 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 10µA to 20mA current range. AMS3100-1.2 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-1.2 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 10µA to 20mA current range. AMS3100-1.2 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-1.2 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 10µA to 20mA current range. AMS3100-1.2 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-1.2 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 10µA to 20mA current range. AMS3100-1.2 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-1.2 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 10µA to 20mA current range. AMS3100-1.2 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-2.5 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 20µA to 20mA current range. AMS3100-2.5 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-2.5 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 20µA to 20mA current range. AMS3100-2.5 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
Battery Powered Systems GENERAL DESCRIPTION The AMS3100-2.5 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 20µA to 20mA current range. AMS3100-2.5 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
Battery Powered Systems GENERAL DESCRIPTION The AMS3100-2.5 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 20µA to 20mA current range. AMS3100-2.5 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-2.5 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 20µA to 20mA current range. AMS3100-2.5 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
Battery Powered Systems GENERAL DESCRIPTION The AMS3100-2.5 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 20µA to 20mA current range. AMS3100-2.5 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-2.5 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 20µA to 20mA current range. AMS3100-2.5 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-2.5 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 20µA to 20mA current range. AMS3100-2.5 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-2.5 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 20µA to 20mA current range. AMS3100-2.5 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-2.5 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 20µA to 20mA current range. AMS3100-2.5 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-2.5 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 20µA to 20mA current range. AMS3100-2.5 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-1.2 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 10µA to 20mA current range. AMS3100-1.2 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-2.5 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 20µA to 20mA current range. AMS3100-2.5 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-2.5 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 20µA to 20mA current range. AMS3100-2.5 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-2.5 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 20µA to 20mA current range. AMS3100-2.5 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-2.5 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 20µA to 20mA current range. AMS3100-2.5 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-2.5 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 20µA to 20mA current range. AMS3100-2.5 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
ADJUSTABLE MICROPOWER VOLTAGE REFERENCE DIODE GENERAL DESCRIPTION The AMS3100 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating from 1.24V to 5.3V and over a 10µA to 20mA current range. AMS3100 is trimmed at wafer test level to optimize the temperature | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-1.2 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 10µA to 20mA current range. AMS3100-1.2 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-2.5 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 20µA to 20mA current range. AMS3100-2.5 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
ADJUSTABLE MICROPOWER VOLTAGE REFERENCE DIODE GENERAL DESCRIPTION The AMS3100 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating from 1.24V to 5.3V and over a 10µA to 20mA current range. AMS3100 is trimmed at wafer test level to optimize the temperature | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-1.2 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 10µA to 20mA current range. AMS3100-1.2 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE GENERAL DESCRIPTION The AMS3100-2.5 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating over a 20µA to 20mA current range. AMS3100-2.5 is trimmed at wafer test level to optimize the temperature coefficient an | ADMOS | | ||
ADJUSTABLE MICROPOWER VOLTAGE REFERENCE DIODE GENERAL DESCRIPTION The AMS3100 are two-terminal micropower band-gap voltage reference that feature a very low dynamic impedance and good temperature coefficient, operating from 1.24V to 5.3V and over a 10µA to 20mA current range. AMS3100 is trimmed at wafer test level to optimize the temperature | ADMOS | | ||
Voltage References | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE 文件：64.819 Kbytes Page：6 Pages | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE 文件：64.819 Kbytes Page：6 Pages | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE 文件：64.819 Kbytes Page：6 Pages | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE 文件：64.819 Kbytes Page：6 Pages | ADMOS | | ||
MICROPOWER VOLTAGE REFERENCE | ADMOS | | ||
Silicon planar type Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V | PANASONIC 松下 | | ||
Silicon planar type Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V | PANASONIC 松下 | | ||
Silicon planar type Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V | PANASONIC 松下 | | ||
Photon Coupled Interrupter Module Description: The NTE3100 Interrupter Module is a gallium arsenide infrared emitting diode coupled to a silicon phototransistor on a plastic housing. The package system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. T | NTE | | ||
SCHOTTKY BARRIER RECTIFIERS(3.0A,70-100V)
| MOSPEC 统懋 | |
AMS3100产品属性
- 类型
描述
- Operating Current：
10mA to 20mA
- Initial Tolerance (%)：
±6
- Package Availability：
SOT-23
- Operating Temp(°C)：
-40 to +85
- Temp. Coefficient (ppm/°C)：
50
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AMS |
22+ |
SOT-23 |
8200 |
原装现货库存.价格优势!! |
|||
AMS |
24+ |
SOT23 |
65200 |
一级代理/放心采购 |
|||
ASSEM |
23+ |
SOT23 |
50000 |
全新原装正品现货,支持订货 |
|||
AMS/艾迈斯 |
05+ |
SOT23 |
2757 |
||||
AMS/艾迈斯 |
25+ |
23 |
8000 |
只有原装 |
|||
AMS/艾迈斯 |
23+ |
SOT-23 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
AMS |
24+ |
SOT-23 |
25000 |
一级专营品牌全新原装热卖 |
|||
AMS/艾迈斯 |
24+ |
23 |
8000 |
新到现货，只做全新原装正品 |
|||
AMS/艾迈斯 |
25+ |
原装 |
32000 |
AMS/艾迈斯全新特价AMS3100BM-2.5即刻询购立享优惠#长期有货 |
|||
AMS |
2016+ |
SOT23 |
6600 |
只做原装,假一罚十,公司可开17%增值税发票! |
AMS3100规格书下载地址
AMS3100参数引脚图相关
- b533
- avr单片机
- avl
- avb
- atmega8
- atmega16
- atmega
- at91sam9263
- at91sam9261
- at89s52
- at89s51
- at89c52
- at89c51
- at89c2051
- as3410
- arm应用
- arm内核
- arm11
- an983b
- an158
- AMS385
- AMS358
- AMS3431
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- AMS339
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- AMS324
- AMS317A
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- AMS3102
- AMS3101
- AMS3100A-2.5AM
- AMS3100A-2.5
- AMS3100A-12
- AMS3100-25CM
- AMS3100-25BM
- AMS3100-25AM
- AMS3100-25
- AMS3100-2.5CM
- AMS3100-2.5BM
- AMS3100-2.5AM
- AMS3100-2.5_08
- AMS3100-2.5
- AMS3100-12CM
- AMS3100-12BM
- AMS3100-12AM
- AMS3100-12
- AMS3100-1.2CM
- AMS3100-1.2BM
- AMS3100-1.2AM
- AMS3100-1.2
- AMS3052
- AMS3051
- AMS3050
- AMS302TJ
- AMS302T-CUT TAPE
- AMS302T
- AMS3024
- AMS3023
- AMS3020
- AMS302
- AMS2R57P57P-8001
- AMS2N60
- AMS2954C-X
- AMS2954CT-X
- AMS2954CT-50
- AMS2954CT-33
- AMS2954CS-30
- AMS2954CS-25
- AMS2954CP-X
- AMS2954CP-50
- AMS2954CP-33
- AMS2954
- AMS2951
- AMS2950
- AMS2942
- AMS2931
- AMS2930
- AMS2911
- AMS2910
- AMS2908
- AMS2907
- AMS2906
- AMS2905
- AMS285
- AMS264
- AMS26
- AMS2596
- AMS2576
- AMS2566
- AMS255B
AMS3100数据表相关新闻
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2019-3-15AMS3431-精密可调并联稳压器
概述: 该AMS3431是一个三端可调温度稳定性有保证，在整个范围内分流调节器运作。输出电压可设置为任何在2.5V电压（VREF）和36V的价值增加了两个外部电阻器。由于在急转弯，该装置的特点是在许多应用中出色的齐纳二极管更换。AMS3431可在节省的SOT -23封装空间，在TO- 92封装。 特征: ·边0.25％基准 ·宽工作电流范围为250mA至150mA的 ·低动态输出阻抗 ·低输出噪声 ·额定温度范围为85℃ ·温度补偿的：/ °60ppmç
2018-12-19AMS2910-1A低压差稳压器
TThhee AMS2910可调和固定电压稳压器系列的目的是提供1A的输出电流和操作下降到1V的输入到输出的差距。该装置的压差，保证在最大输出的最大1.5V的当前，减少在低负载电流。片上参考电压微调调整到1％。电流限制也修剪，超负荷的压力下最小同时在条件稳压器和电源电路。该AMS2910设备的引脚与其它三端稳压器兼容，并在3导提供TO - 220封装，在3Lead的TO - 263（塑料日）在TO - 252（丁巴基斯坦），在低调的表面贴装的SOT - 223封装。
2013-2-3AMS682-反相电压倍增
AMS682是一个CMOS电荷泵转换器，它提供了一个倒了一倍，从一个单一的正电源输出。要求只有三个完整的电路实现的外部电容器设备板上12kHz的振荡器（典型值）它提供的时钟。低输出源阻抗（通常为140W），输出电流高达10mA的电流。 AMS682功能的低静态电流和高效率，使其为各种各样的应用，需要一个负电压的理想选择来自单一正电源。紧凑的尺寸和最少的外部元件数的AMS682使得它有用许多中等电流，双电压的模拟电源。AMS682E是运行在完整的工业温度范围-40° C至85 ° C，而AMS682C超过0 ° C至70 ° C温度范围。 AMS682E/AMS682C是表面贴装8引脚SOIC（
2012-12-28
DdatasheetPDF页码索引
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