丝印代码：C0300R；AMC0x00R Precision, ±250-mV Input, Basic and Reinforced Isolated Amplifiers With Single-Ended, Ratiometric Output

1 Features • Linear input voltage range: ±250mV • Supply voltage range: – High-side (VDD1): 3.0V to 5.5V – Low-side (VDD2): 3.0V to 5.5V • Single-ended, ratiometric output – Reference Input: 2.7V to 5.5V • Low DC errors: – Offset error: ±0.2mV (maximum) – Offset drift: ±3μV/°C (maximum)

N-Channel Enhancement-Mode Vertical DMOS Power FETs?

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedanc

TMOS FET Transistor

TMOS FET Transistor N–Channel — Enhancement

N-Channel Enhancement-Mode Vertical DMOS Power FETs?

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedanc

Silicon planar type

文件：49.05 Kbytes Page：4 Pages

Silicon PIN Photodiodes

文件：103.53 Kbytes Page：4 Pages