| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
P-Channel 40-V (D-S) MOSFET Key Features: •Low rDS(on) trench technology •Low thermal impedance •Fast switching speed | AnalogPower |   | ||
P-Channel 40-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed | AnalogPower | | ||
P-Channel 40-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed | AnalogPower | | ||
P-Channel 40-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed | AnalogPower | | ||
P-Channel 40-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed | AnalogPower | | ||
P-Channel 40-V (D-S) MOSFET 文件：60.11 Kbytes Page：2 Pages | AnalogPower | | ||
MOSFET | AnalogPower | | ||
MOSFET | AnalogPower | | ||
MOSFET | AnalogPower | | ||
P-Channel 40-V (D-S) MOSFET 文件：340.46 Kbytes Page：5 Pages | AnalogPower | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -89A, RDS(ON) = 7.1mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 11mW @VGS = -4.5V. | CET-MOS 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -74A, RDS(ON) = 7.5mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 11mW @VGS = -4.5V. RoHS compliant. | CET-MOS 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -89A, RDS(ON) = 7.1mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 11mW @VGS = -4.5V. | CET-MOS 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -74A, RDS(ON) = 7.5mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 11mW @VGS = -4.5V. RoHS compliant. | CET-MOS 华瑞 | | ||
P-Channel Enhancement Mode Power MOSFET Description The G90P04F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ANALOGPOW |
25+ |
TO-220 |
32500 |
原装正品,欢迎来电咨询! |
|||
ANALOG |
23+ |
TO220 |
6500 |
专注配单,只做原装进口现货 |
|||
ANALOGP |
23+ |
TO-220 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ANALOGPOW |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
AP |
23+ |
TO-220 |
12800 |
公司只有原装 欢迎来电咨询。 |
|||
ANALOGPOW |
TO-220 |
22+ |
6000 |
十年配单,只做原装 |
|||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
|||
ANALOGPOWER |
2511 |
TO-263 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ANALOGPOW |
23+ |
TO-220 |
35628 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
ANALOGPOW |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
AM90P04芯片相关品牌
AM90P04规格书下载地址
AM90P04参数引脚图相关
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- AM9412N
- AM9410N
- AM9157A
- AM9150
- AM9128
- AM9111C
- AM9111B
- AM9111A
- AM9111
- AM90P10-300B
- AM90P10-19FP
- AM90P10-19B
- AM90P10-117P
- AM90P06-70PCFM
- AM90P06-20PF
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- AM90P04-06B
- AM90P04-03P
- AM90P03-07FP
- AM90P03-03P
- AM90P03-02P
- AM90P02-05P
- AM90P02-02P
- AM90N30-800B
- AM90N30-290B
- AM90N20-78B
- AM90N20-40P
- AM90N20-140B
- AM90N15-38B
- AM90N15-20P
- AM90N15-16B
- AM90N15-15B6L
- AM90N12-10PF
- AM90N12-10P
- AM90N12-10B6L
- AM90N12-03B
- AM90N10-23P
- AM90N10-19P
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- AM9080A
- AM9044E
- AM9044D
- AM9044C
- AM9044B
- AM9044
- AM8T-Z
- AM8TW-Z
- AM8TW-I
- AM8TW-C
- AM8T-IZ
- AM8T-I
- AM8T-C
- AM8T28
- AM8T26A
- AM8N80P
- AM8N60P
- AM8958C
- AM8958
AM90P04数据表相关新闻
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原装正品，价格优势，竭力为您服务 0755-88600196/QQ3007281353
2019-6-24AM90N06-03B
深圳科雨电子有限公司，联系人：卢小姐 手机：18975515225 原装正品 大量现货，有需要的可以联系我 QQ:97877805 微信：wei555222777
2019-5-24
DdatasheetPDF页码索引
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