P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION AM7407 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalanc

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION AM7407 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalanc

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION AM7407 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalanc

Hex Buffers with High Voltage Open-Collector Outputs

General Description This device contains six independent gates each of which performs a buffer function. The open-collector outputs require external pull-up resistors for proper logical operation.

Bipolar TTL Logic

Features  High Sink-Current Capability: 40mA  High Voltage Open-Collector Driver  Minimum breakdown voltage: 30V  Input Clamp Diodes minimize transmission-line effects  TTL compatible inputs  Direct drop-in replacement for obsolete components in long term programs.

Bipolar TTL Logic

文件：439.15 Kbytes Page：4 Pages

with Open-Collector Outputs

文件：484.35 Kbytes Page：12 Pages

P-Channel Enhancement Mode MOSFET

文件：450.88 Kbytes Page：7 Pages