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AM6594

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION AM6594 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalanc

AITSEMI

创瑞科技

AM6594

MOS管开关

AITSEMI

创瑞科技

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION AM6594 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalanc

AITSEMI

创瑞科技

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION AM6594 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalanc

AITSEMI

创瑞科技

Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features

文件:247.9 Kbytes Page:10 Pages

INTERSIL

Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features

文件:247.9 Kbytes Page:10 Pages

INTERSIL

Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features

文件:247.9 Kbytes Page:10 Pages

INTERSIL

Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features

文件:264.29 Kbytes Page:11 Pages

INTERSIL

Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features

文件:264.29 Kbytes Page:11 Pages

INTERSIL

AM6594产品属性

  • 类型

    描述

  • 入侵检测系统(一) (25°C):

    30

  • 稳态分布容积 (V):

    ±20

  • VGS (V):

    25.5

  • 阈值电压(V) 最小值/最大值:

    1.0/2.5

  • RDS(ON) Vgs=±10V(mΩ) 型:

    4.5

  • Vgs=±4.5V(mΩ) 型:

    5.6

  • 应用:

    PWM/Switch

  • 交叉参考:

    AON6594

AM6594数据表相关新闻