DESCRIPTION

AM6594 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

AM

6594 is available in a DFN8(5x6) package.

FEATURES

 V DS = 3 0V, I D = 50 A

R

DS(ON) 4.5 mΩ(Typ.)@V GS 10V

R

DS(ON) 5.6 mΩ(Typ.)@V GS 4.5V

 Low Gate Charge

 100 UIS and Rg tested

 High power and current handling capability

 A vailable in a DFN8(5x6) package

APPLICATION

 Wireless Charging

 DC/DC Converters

 Load Switch