30V DUAL N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM4920 is the Dual N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous

30V DUAL N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM4920 is the Dual N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 19.2 VOLT NOMINAL ZENER VOLTAGE + 5 • LOW NOISE • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 19.2 VOLT NOMINAL ZENER VOLTAGE + 5 • LOW NOISE • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED

VERY LOWDROP ADJUSTABLE REGULATORS

DESCRIPTION The L4920 and L4921 are adjustable voltage regulator swith a very low voltage drop(0.4V typ.at 0.4A Tj = 25°C), low quiescent current and comprehensive on-chip protection. These devices are protected against load dump and field decay transients, polarity reversal and over heating

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

Dual N-Channel, Logic Level, PowerTrench MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage an