绝缘栅双极 IGBT

1200V, 40A, Irrm=12.3A IGBT MOSFET

DESCRIPTION The AM40T120 is available in TO-247 Package FEATURES ⚫ Fast Switching ⚫ Low VCE(sat): 2.1V ⚫ Positive Temperature Coefficient ⚫ Very Soft, Fast Recovery Anti-Parallel Diode ⚫ Irrm: 12.3A APPLICATION ⚫ UPS ⚫ Welding Converters ⚫ Converters With High Switching Frequency

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, Power TO247-3L 1200 V, 1.45 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topology in automotive applications. Features

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.42 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topologies in automotive applications. Features

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.67 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. Features  Extremel

IGBT – Power, Single, N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.67 V, 40 A

Description Using the novel field stop 7th generation IGBT technology in TO247 3−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. Features  Extremely Efficient Trench