MOSFET 30V N-CHANNEL ENHANCEMENT-MODE

FEATURES Low gate voltage threshold(V GS(th) th))to facilitate drive circuit design Low gate charge for f ast switching ESD protected gate Minimum breakdown voltage rating of 30 V Available in SOT-23S p ackage DESCRIPTION VDS=3 0 V 20 V ID(A)=0.5 6 A RDS(ON), VGSGS@4.0V, IDSDS@10mA =

低压MOS管

POWER DIVIDERS - THREE WAY, 1 TO 18 GHZ

FEATURES • Designed to Meet MIL-E-5400 Class 3 • SMA Female Connectors per MIL-PRF-39012 • High Isolation Wilkinson Circuit Design

STANDARD SERIES

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TERMINAL LUGS

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Generates Sine, Triangle, & Square waveforms from 0.5 Hz to 4 MHz

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4 MHz Sweep Function Generators

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