MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM3415 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON) low gate charge and operation with gate voltage as 1.5V. This device is suitable for use as a load switch or i

SOT-23/SOT-23S 晶體管

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM3415A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. The AM3415A is available in SOT-23 package. FEATU

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM3415A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. The AM3415A is available in SOT-23 package. FEATU

MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM3415A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. The AM3415A is available in SOT-23 package. FEATU

MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION V DS 20V V GS =±8V ID(A)= 4 A R DS(ON) ON)=3 5 mΩ Typ ..) 4V5 R DS(ON )=45 mΩ Typ 2V5 R DS(ON) ON)=55 mΩ Typ ..) 1V8 R DS(ON) 70 mΩ Typ ..) 1V5 The AM3415B is available in SOT-23S package. FEATURES  ESD: 3 kv  Available in SOT-23S p ackage APPLICATIONS  Load Sw

MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION V DS 20V V GS =±8V ID(A)= 4 A R DS(ON) ON)=3 5 mΩ Typ ..) 4V5 R DS(ON )=45 mΩ Typ 2V5 R DS(ON) ON)=55 mΩ Typ ..) 1V8 R DS(ON) 70 mΩ Typ ..) 1V5 The AM3415B is available in SOT-23S package. FEATURES  ESD: 3 kv  Available in SOT-23S p ackage APPLICATIONS  Load Sw

MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION V DS 20V V GS =±8V ID(A)= 4 A R DS(ON) ON)=3 5 mΩ Typ ..) 4V5 R DS(ON )=45 mΩ Typ 2V5 R DS(ON) ON)=55 mΩ Typ ..) 1V8 R DS(ON) 70 mΩ Typ ..) 1V5 The AM3415B is available in SOT-23S package. FEATURES  ESD: 3 kv  Available in SOT-23S p ackage APPLICATIONS  Load Sw

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM3415 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON) low gate charge and operation with gate voltage as 1.5V. This device is suitable for use as a load switch or i

MOSFET P-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM3415 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON) low gate charge and operation with gate voltage as 1.5V. This device is suitable for use as a load switch or i

SOT-23/SOT-23S 晶體管

低压MOS管

丝印代码：3415；P-Channel Enhancement Mode Power MOSFET

Description The 3415A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

-4.0A竊?20V P-CHANNEL MOSFET

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12V P-channel MOS FET

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Heyco® PG and Metric Threaded Plugs

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Heyco® PG and Metric Threaded Plugs

文件：114.81 Kbytes Page：1 Pages