MOSFET 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION VDS=30V 12V ID(A)=5.8A R DS(ON)

MOSFET 30V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION AM3400A is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package.

MOSFET 30V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION AM3400A is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package.

MOSFET 30V N-CHANNEL ENHANCEMENT MODE

DESCRIPTION AM3400A is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package.

MOSFET 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION VDS=30V 12V ID(A)=5.8A R DS(ON)

MOSFET 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION VDS=30V 12V ID(A)=5.8A R DS(ON)

3400 MHz Ceramic Band Pass Filter

3400 MHz Ceramic Band Pass Filter

MOSFET

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丝印代码：3400；The 3400 uses advanced trench technology to provide excellent RDS(ON)

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