Cascadable Thin Film Amplifier, 13 dB Gain, 5 - 1000 MHz

Description M/A-COM’s AM-176 is a feedback amplifier with high intercept and compression points. This amplifier is packaged in a TO-8 package. Due to the internal power dissipation the thermal rise should be minimized. The ground plane on the PC board should be configured to remove heat from unde

Cascadable Thin Film Amplifier 13 dB Gain, 5 - 1000 MHz

Description M/A-COM’s AM-176 is a feedback amplifier with high intercept and compression points. This amplifier is packaged in a TO-8 package. Due to the internal power dissipation the thermal rise should be minimized. The ground plane on the PC board should be configured to remove heat from unde

Cascadable Thin Film Amplifier, 13 dB Gain, 5 - 1000 MHz

Cascadable Thin Film Amplifier 13 dB Gain, 5 - 1000 MHz

Description M/A-COM’s AM-176 is a feedback amplifier with high intercept and compression points. This amplifier is packaged in a TO-8 package. Due to the internal power dissipation the thermal rise should be minimized. The ground plane on the PC board should be configured to remove heat from unde

Cascadable Thin Film Amplifier, 13 dB Gain, 5 - 1000 MHz

Description M/A-COM’s AM-176 is a feedback amplifier with high intercept and compression points. This amplifier is packaged in a TO-8 package. Due to the internal power dissipation the thermal rise should be minimized. The ground plane on the PC board should be configured to remove heat from unde

Cascadable Thin Film Amplifier

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Cascadable Thin Film Amplifier

文件：83.6 Kbytes Page：3 Pages

Cascadable Thin Film Amplifier

文件：613.65 Kbytes Page：4 Pages

Cascadable Thin Film Amplifier, 13 dB Gain, 5 - 1000 MHz

文件：222.34 Kbytes Page：3 Pages

5-1000 MHz, 13 dB gain, cascadable thin film amplifier

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

N-CHANNEL MOS BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Electrical Performance

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.