NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI ALR325 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 6.5 db at 325 W/1400 MHz • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

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NPN SILICON RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

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Silicon NPN RF Power Transistor 50W @ 30MHz

Description: The NTE325 is a silicon NPN RF power transistor in a T72H type package designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30MHz. Features: ● Specified 12.5V, 30MHz Characteristics: Output Power = 50W Minimum Gain = 11dB Efficiency =

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR325CTD series is supplied in the SOT428 surface mounting package. FEATURES • Low forward volt drop • Fast switching • Reverse surge ca

Dual Voltage Regulator

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Dual Voltage Regulator

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BROADBAND RF POWER TRANSISTOR NPN SILICON

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