沟槽MOSFET

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V, -20A, RDS(ON) =130mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -100V, -16A, RDS(ON) = 130mΩ @VGS = -10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V, -16A, RDS(ON) = 130mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -100V, -20A, RDS(ON) =130mΩ @VGS = -10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V, -20A, RDS(ON) =130mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.