SPI bus 256Kbit Serial CMOS EEPROM

文件：129.9 Kbytes Page：17 Pages

SPI bus 256Kbit Serial CMOS EEPROM

SPI bus 256Kbit Serial CMOS EEPROM

The AK6516C is a 262144-bit, serial, read/write, non-volatile memory device fabricated using an advanced CMOS EEPROM technology. \nThe AK6516C has 262144-bits of memory organized as 32768 registers of 8 bits each. \nThe AK6516C can operate all function under wide operating voltage range: 1.6V to 5.5

SPI bus 256Kbit Serial CMOS EEPROM

文件：129.9 Kbytes Page：17 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC EEPROM 256KBIT SPI 10MHZ 8SOP 集成电路（IC） 存储器

2K x 8 CMOS RAM

Description The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low power is further enhanced by the use of synchronous circuit techniques that keep the active (operating) power low, which

Two-Output Power Amplifier

Overview The LA6516 is a two-output power amplifier developed for use in both consumer and industrial equipment. Functions • High slew rate (1.0 V/µs) • High output current (IO max = 1.0 A) • Current limiter function • Wide operating voltage range (±2 to 18 V) • Supports single-voltage powe

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS MPS6516 thru MPS6519 are PNP siliocn planar epitaxial transistors designed for general purpose amplifier applications and for complementary circuitry.

SMPS PRIMARY IC

The Series STR-F6600 is specifically designed to satisfy the requirements for increased integration and reliability in off-line quasi-resonant flyback converters. The series incorporates a primary control and drive circuit with discrete avalanche-rated power MOSFETs. Covering the power range from

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free