262,144 X 8 Bit MOS Dynamic Random Access Memory

文件：113.66 Kbytes Page：2 Pages

65,536 x 32 Bit CMOS/BiCMOS Static Random Access Memory

文件：86.78 Kbytes Page：2 Pages

32,768 x 32 Bit CMOS / BiCMOS Static Random Access Memory

文件：89.59 Kbytes Page：2 Pages

32,768 x 32 Bit CMOS/BiCMOS Static Random Access Memory

文件：82.44 Kbytes Page：2 Pages

16,384 x 32 Bit CMOS / BiCMOS Static Random Access Memory

文件：89.76 Kbytes Page：2 Pages

65,536 x 32 Bit CMOS/BiCMOS Static Random Access Memory

文件：91.98 Kbytes Page：2 Pages

262,144 x 8 bit CMOS Dynamic Random Access Memory

文件：90.24 Kbytes Page：2 Pages

32K WORD X 8 BIT HIGH SPEED CMOS STATIC RAM

Description The CXK58256P/M is a 262,144 bits high speed CMOS static RAM organized as 32,768 words by 8 bits and operates from a single 5V supply. The CXK58256P/M is suitable for use in high speed and low power applications in which battery back up for nonvolatility is required.

256-MBIT (32M X 8 BITS) CMOS NAND E2PROM

DESCRIPTION The TC58256A is a single 3.3 V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes x 32 pages x 2048 blocks. The device has a 528-byte static register which allows program and read data to be transferred between

256-MBIT (32M x 8BITS) CMOS NAND EEPROM

256-MBIT (32M x 8 BITS) CMOS NAND E2PROM