262,144 X 8 Bit MOS Dynamic Random Access Memory

文件：113.66 Kbytes Page：2 Pages

32,768 x 32 Bit CMOS/BiCMOS Static Random Access Memory

文件：82.44 Kbytes Page：2 Pages

32,768 x 32 Bit CMOS / BiCMOS Static Random Access Memory

文件：89.59 Kbytes Page：2 Pages

16,384 x 32 Bit CMOS / BiCMOS Static Random Access Memory

文件：89.76 Kbytes Page：2 Pages

65,536 x 32 Bit CMOS/BiCMOS Static Random Access Memory

文件：91.98 Kbytes Page：2 Pages

65,536 x 32 Bit CMOS/BiCMOS Static Random Access Memory

文件：86.78 Kbytes Page：2 Pages

CMOS 64K (8K x 8) Static RAM

DESCRIPTION The LH5164A/AH are static RAMs organized as 8,192 × 8 bits. It is fabricated using silicon-gate CMOS process technology. The LH5164AH is designed for wide temperature range from -40 to +85°C. FEATURES • 8,192 × 8 bit organization • Access times: 80/100 ns (MAX.) • Low-power consu

CMOS 64K (8K x 8) Static RAM

DESCRIPTION The LH5164ASH is a static RAM organized as 8,192 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It is designed for 2.5 to 5.5 V low voltage operation and wide temperature range from -40 to +85°C. FEATURES • 8,192 × 8 bit organization • Access time: 500 ns (

CMOS 64K (8K x 8) Static RAM

DESCRIPTION The LH5164AV is a static RAM organized as 8,192 × 8 bits. It is fabricated using silicon-gate CMOS process technology. FEATURES • 8,192 × 8 bit organization • Access time: 200 ns (MAX.) • Supply current (MAX.): Operating: 248 mW 55 mW (tRC, tWC = 1 µs) Standby: 5.5

CMOS 64K (8K x 8) Static RAM

文件：105.12 Kbytes Page：11 Pages

PHOTO REFLECTOR?

文件：288.13 Kbytes Page：9 Pages