高性能、低成本的无线发射SoC芯片

AK1013是一颗高性能、低成本的无线发射SoC芯片，射频工作在2.400～2.480GHz通用ISM频段，片上集成高性能低功耗MCU，集成匹配网络、发射机集成度高，外围器件达到业界最简。\r\n\r\nAK1013支持BLE iBeacon协议，射频性能优秀，特别适于遥控器及射频标签等射频发射应用场景。 低功耗\r\n发射模式(0dBm )工作电流19mA@0dBm。休眠电流2uA。\r\n\r\n低成本\r\n24MHz 10pF晶振，±50ppm，无需外部匹配电容。内置匹配网络。\r\n\r\n高性能\r\n发射最大功率9dBm。\r\n\r\n内置MCU功能\r\nOTP: 2Kx32Bit。RAM: 512 Byte。集成WDT定时器、PWM输出、低压检测电路。\r\n\r\n其他特性\r\n支持最大数据长度为64字节。支持自动扰码、CRC校验。\r\n\r\n量产封装形式\r\n量产封装形式：SOP16;

FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

N-channel enhancement mode MOS transistor

DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ‘trench’ technology, in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • Very low on-state resistance. APPLICATIONS • DC to DC converters • General purpose switching applications.

VTB Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.

GaAs Infrared Emitting Diodes

DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.